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RFK70N06
Data Sheet September 1998 File Number
4331.1
70A, 60V, 0.014 Ohm, N-Channel Power MOSFET
The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49007.
Features
* 70A, 60V * rDS(ON) = 0.014 * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature
Symbol
D
Ordering Information
PART NUMBER RFK70N06 PACKAGE TO-204AE BRAND RFK70N06
S G
NOTE: When ordering, use the entire part number.
Packaging
TO-204AE
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
RFK70N06
Absolute Maximum Ratings
TC = 25oC Unless Otherwise Specified RFK70N06 60 60 70 Refer to Peak Current Curve 20 Refer to UIS Curve 150 1.0 -55 to 175 260 UNITS V V A V W W/oC oC
oC
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC VGS = 20V ID = 70A, VGS = 10V (Figure 10) VDD = 30V, ID 70A, RL = 0.43, VGS = 10V, RG = 2.5 (Figures 14, 17, 18) MIN 60 2 VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 48V, ID 70A, RL = 0.68, IG(REF) = 1.0mA (Figures 19, 20) TYP 12 50 40 15 185 100 5.5 3000 900 300 MAX 4 1 25 100 0.014 125 125 215 115 6.5 1.0 80 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS RJC RJA
VDS = 25V, VGS = 0V, f = 1MHz (Figure 13)
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300ms, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Temperature curve (Figure 3). SYMBOL VSD trr ISD = 70A ISD = 70A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns
2
RFK70N06 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 0.6 0.4 0.2 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 ZJC, NORMALIZED TRANSIENT 1 THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM
0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-1 10-2 t, RECTANGULAR PULSE DURATION (s) 100 101
SINGLE PULSE 0.01 10-5 10-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
TJ = MAX RATED TC = 25oC IDM, PEAK CURRENT (A)
1000
TC = 25oC
ID, DRAIN CURRENT (A)
FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I
100
100s
= I25
150 - TC 125
1ms
10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms 100ms DC
VGS = 10V 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 10-1 100 101
100
50 10-5
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
3
RFK70N06 Typical Performance Curves
300 IAS, AVALANCHE CURRENT (A)
(Continued)
ID, DRAIN CURRENT (A)
If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1] STARTING TJ = 25oC
200 VGS = 8V 160 VGS = 20V 120 VGS = 10V VGS = 7V PULSE DURATION = 250s TC = 25oC VGS = 6V VGS = 5V VGS = 4.5V
100
80
STARTING TJ = 150oC 10 0.01
40
1 0.1 tAV, TIME IN AVALANCHE (ms)
0 10
0
1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V)
5
NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS
IDS(ON), DRAIN TO SOURCE CURRENT (A)
200 DUTY CYCLE = 0.5% MAX PULSE DURATION = 250s 160 -55oC 120 175oC 25oC VDD = 15V rDS(ON), DRAIN TO SOURCE
50 ID = 140A 40 ON RESISTANCE (m) ID = 70A 30 ID = 35A 20 ID = 17.5A 10 PULSE DURATION = 250s, VDD = 15V TC = 25oC
80
40
0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
0 4
5
6
7
8
9
10
VGS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
2.5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 250s PULSE TEST VGS = 10V, ID = 70A NORMALIZED GATE THRESHOLD VOLTAGE 2
2 VGS = VDS, ID = 250A
1.5
1.5
1
1
0.5
0.5
0 -80
-40
0
40
80
120
160
200
0 -80
-40
TJ, JUNCTION TEMPERATURE (oC)
0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
4
RFK70N06 Typical Performance Curves
2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 4000 1.5 C, CAPACITANCE (pF) CISS 3000
(Continued)
5000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS
1
2000 COSS 1000 CRSS
0.5
0 -80
0 -40 160 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) 200 0 5 10 15 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 25
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VDS , DRAIN TO SOURCE VOLTAGE (V)
VDD = BVDSS
VDD = BVDSS 7.5 RL = 0.86 IG(REF) = 2.2mA VGS = 10V
45
30
5.0
15
PLATEAU VOLTAGES IN DESCENDING ORDER: VDD = BVDSS VDD = 0.75 BVDSS VDD = 0.50 BVDSS VDD = 0.25 BVDSS
2.5
0
0
20 --------------------I G ( ACT )
I G ( REF )
t, TIME (s)
80 --------------------I G ( ACT )
I G ( REF )
NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
5
VGS , GATE TO SOURCE VOLTAGE (V)
60
10.0
RFK70N06 Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
0V
IAS 0.01
0 tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON VDS VDS VGS RL
+
tOFF td(OFF) tr tf 90%
td(ON)
90%
DUT RGS VGS
-
VDD
0
10% 90%
10%
VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDS RL VDD VDS VGS = 20V VGS
+
Qg(TOT)
Qg(10) VDD VGS VGS = 2V 0 Qg(TH) IG(REF) 0 VGS = 10V
DUT IG(REF)
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
6
RFK70N06 PSPICE Electrical Model
.SUBCKT RFK70N06 2 1 3 ;
CA 12 8 5.56e-9 CB 15 14 5.30e-9 CIN 6 8 2.63e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.18 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 11.45e-9 LSOURCE 3 7 4.60e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 4.66e-3 RLDRAIN 2 5 10 RGATE 9 20 1.21 RLGATE 1 9 114.5 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.92e-3 RLSOURCE 3 7 46 RVTO 18 19 RVTOMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD
GATE 1 LGATE
rev 1/16/97
RLDRAIN DPLCAP 10 LDRAIN RDRAIN DBREAK 5 2 DRAIN
ESG + RLGATE 9 20 + EVTO 18 8 6 8 16 VTO
11 EBREAK 17 18 21 MOS1 RIN CIN 8 RSOURCE MOS2
DBODY +
6
+
-
RGATE
RLSOURCE 7 3 SOURCE LSOURCE
S1A 12 S1B CA + EGS 6 8 13 8 14 13
S2A 15 17 S2B 13 CB + EDS 14 5 8 IT
RBREAK 18 RVTO 19 VBAT +
-
-
VBAT 8 19 DC 1 VTO 21 6 0.605
.MODEL DBDMOD D (IS = 7.91e-12 RS = 3.87e-3 TRS1 = 2.71e-3 TRS2 = 2.50e-7 CJO = 4.84e-9 TT = 4.51e-8) .MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5) .MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.46 KP = 47 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7) .MODEL RDSMOD RES (TC1 = 2.23e-3 TC2 = 6.56e-6) .MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global ature Options; written by William J. Hepp and C. Frank Wheatley. Temper-
7
RFK70N06
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